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AWM6432
3.3-3.6 GHz WiMAX PowerAmplifier Module
PRELIMINARY DATA SHEET- Rev 1.1
FEATURES
* * * * * * * * * 26.5 dB Gain +24 dBm Linear Output Power 2.3 % EVM (OFDM Modulation) +5 V to +6 V Supply High Efficiency Integrated Step Attenuator Integrated Output Power Detector 50 Matched RF Ports RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
AWM6
432
APPLICATIONS
* * WiMAX tranceivers that support the IEEE 802.16-2004 and ETSI EN301-021 standards Broadband Wireless Applications (BWA)
M18 Package 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6432 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability and ruggedness. It is optimized for use in a 50 system, and is offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount module.
Supply Voltage
PRODUCT DESCRIPTION
The ANADIGICS AWM6432 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed to operate in the 3.5 GHz band, it supports the IEEE 802.16-2004 and ETSI EN301-021 wireless standards. The device requires only a single +5 V to +6 V supply and a low-current reference input. An integrated detector can be used to monitor output power, and an integrated 20 dB step attenuator enables gain
Supply Voltage
RF Input
Step Attenuator
Matching Network
RF Output
Bias Control
Power Detector
Attenuator Control
Bias Voltage
Detector Ouput
Ground
Figure 1: Functional Block Diagram
11/2006
AWM6432
VCC RFIN GND VBIAS VCC VATTN
1 2 3 GND 4 5 6
Figure 2: Pinout (X-ray Top View)
12 VCC 11 GND 10 RFOUT 9 8 7 GND GND DET
Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 11 12 NAME V CC RFIN GND VBIAS V CC VATTN D ET GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Bias/Shutdown Supply Voltage Attenuator Control Detector Output Ground Ground RF Output Ground Supply Voltage
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PRELIMINARY DATA SHEET - Rev 1.1 11/2006
AWM6432
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) RF Input Power ESD Rating MSL Level Storage Temperature MIN 0 0 0 Class 1A Class 3 3 4 -40 MAX +6.5 +3.3 +3.7 0 +150 UNIT V V V dB m C OFDM modulated signal HBM CDM 235 C Peak Reflow 250 C Peak Reflow COMMENTS
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER Operating Frequency (f) Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) Logic High Logi c Low RF Output Power (POUT) Case Temperature (TC) MIN 3300 +5.0 +2.9 0 +2.3 0 -40 TYP +3.0 +24 MAX 3600 +6.0 +3.1 +0.7 +3.7 +0.7 +85 UNIT MHz V V PA"on" PA"shut down" Attenuator enabled Nominal gain COMMENTS
V dB m C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
3
AWM6432 Table 4: Electrical Specifications (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.6 GHz, 50 system) PARAMETER Gain Attenuator Step Output Power Meets Spectrum Mask EVM Output P1dB Output IP3 Harmonics Power-Added Efficiency Power Detector Voltage at +24 dBm POUT at +14 dBm POUT Quiescent Current Current Consumption VCC VBIAS VATTN Leakage Current
Note: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
MIN 25 18 +24 -
TYP 26.5 20 2.3 +31 +43 -20 12.8
MAX 30 22 2.5 -
UNIT dB dB dB m % dB m dB m dB m %
COMMENTS
ETSI EN301-021 Type G at +24 dBm POUT CW two CW tones, +21 dBm output per tone at +24 dBm POUT at +24 dBm POUT
-
+2.6 +0.6 87
120
V mA
High impedance load
-
305 7.4 0.2 1.7
365 8 1.0 3.0
POUT = +24 dBm mA Logic High = +3.3 V mA PA shut down (VBIAS = 0V)
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PRELIMINARY DATA SHEET - Rev 1.1 11/2006
AWM6432
PERFORMANCE DATA
Figure 3: Gain vs. Output Power (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation)
31.0 30.5 30.0 29.5
Figure 4: Gain vs. Frequency (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, POUT = +24 dBm, 54 Mbps OFDM Modulation)
31.0 30.5 30.0 29.5
Gain (dB)
28.5 28.0 27.5 27.0 26.5 26.0 14 15 16 17 18 19 20 21 22 23 24 25 26
Gain (dB)
29.0
29.0 28.5 28.0 27.5 27.0 26.5 26.0 3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
Output Power (dBm)
Frequency (GHz)
Figure 5: Uncorrected EVM vs. Output Power (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %)
7 Frequency 6 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz
Figure 6: Uncorrected EVM vs. Frequency (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %)
7 Output Power 6 +24 dBm +23 dBm +22 dBm
5
5
EVM (%)
EVM (%)
4
4
3
3
2
2
1
1
0 14 15 16 17 18 19 20 21 22 23 24 25 26
0 3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
Output Power (dBm)
Frequency (GHz)
Figure 7: Detector Voltage vs. Output Power (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation)
3.5
3.5
Figure 8: Detector Voltage vs. Frequency (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation)
Output Power 3.0 +24 dBm +18 dBm +21 dBm +15 dBm
3.0
Detector Voltage (V)
2.0
Detector Voltage (V)
14 15 16 17 18 19 20 21 22 23 24 25 26
2.5
2.5
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0 3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
Output Power (dBm)
Frequency (GHz)
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
5
AWM6432 Figure 9: Effects of Bias Voltage (VBIAS) on EVM (TC = +25 C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %)
7 Bias Voltage 6 +2.8 V +2.9 V +3.0 V +3.1 V
5
EVM (%)
4
3
2
1
0 14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Figure 10: Effects of Supply Voltage (VCC) on EVM (TC = +25 C, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %)
7 Vcc 6 +5.0 V +5.5 V +6.0 V
5
EVM (%)
4
3
2
1
0 14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Figure 11: Effects of Case Temperature on EVM (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %)
7 Case Temperature 6 +85 deg C +50 deg C +25 deg C 0 deg C -25 deg C -40 deg C
5
EVM (%)
4
3
2
1
0 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
6
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
AWM6432 Figure 12: Gain vs. Bias Voltage (VBIAS) (TC = +25 C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation)
31.0 30.5 30.0 29.5
Figure 13: Gain vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm, 54 Mbps OFDM Modulation)
31.0 30.5 30.0 29.5
Gain (dB)
2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15
Gain (dB)
29.0 28.5 28.0 27.5 27.0 26.5 26.0 2.75
29.0 28.5 28.0 27.5 27.0 26.5 26.0 -50 -40 -30 -20 -10 0 10 20 30
o
40
50
60
70
80
90
Bias Voltage (V)
Case Temperature ( C )
Figure 14: Supply Current vs. Output Power (TC = +25 C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation)
350
Figure 15: Supply Current vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm 54 Mbps OFDM Modulation)
300
300
280
200
Icc (mA)
14 15 16 17 18 19 20 21 22 23 24 25 26
Icc (mA)
250
260
240
150
220
100
200 -50 -40 -30 -20 -10 0 10 20 30
o
40
50
60
70
80
90
Output Power (dBm)
Case Temperature ( C )
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
7
AWM6432
APPLICATION INFORMATION
Transmit Disable and Attenuator Control The power amplifier is disabled by setting VBIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN.
VCC
VCC
2.2 F
1
0.01 F
VCC RFIN GND VBIAS VCC VATTN VCC GND RFOUT GND GND DET GND at slug
12 11 10 9 8 7 2 3
1 F
2.2 F
RF IN
RF OUT
VBIAS VCC
4 5 VATTN 6
100 pF 0.1 F
DETOUT
4.7 K
0.1 F
Figure 16: Application Circuit
8
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
AWM6432
Figure 17: Land Pattern
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
9
AWM6432
PACKAGE OUTLINE
Figure 18: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
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PRELIMINARY DATA SHEET - Rev 1.1 11/2006
AWM6432
NOTES
PRELIMINARY DATA SHEET - Rev 1.1 11/2006
11
AWM6432
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION RoHS-compliant 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module COMPONENT PACKAGING
AWM6432RM18P8
-40 C to +85 C
2,500 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.1 11/2006

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